Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Abstract

In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts.

8 pages, 4 figures and supplementary info regarding procedure for transfer

References in corpus (12)

• Electric Field Effect in Atomically Thin Carbon Films
• Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
• Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Graphene Segregated on Ni surfaces and Transferred to Insulators
• Universal dynamical conductance in graphite
• Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
• Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering
• Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
• Graphene formation on SiC substrates
• Epitaxial Graphene Growth on SiC Wafers

Cited by in corpus (16)

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• Electronic properties of graphene: a perspective from scanning tunneling microscopy and magneto-transport
• Energy gap tuning in graphene on hexagonal boron nitride bilayer system
• Annealing Free, Clean Graphene Transfer using Alternative Polymer Scaffolds
• Straining Graphene by Chemical Vapour Deposition Growth on Copper
• Mixed-Stacking Few-Layer Graphene as an Elemental Weak Ferroelectric Material
• CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes
• Transfer Printing of CVD Graphene FETs on Patterned Substrates
• Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements
• Integrated photonics incorporating 2D materials for practical applications
• Designed Three-Dimensional Freestanding Single-Crystal Carbon Architectures
• Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters
• Effect of C-face 4H-SiC(0001) deposition on thermopower of single and multilayer graphene in AA, AB and ABC stacking
• Thermal Conductance across beta-Ga2O3-diamond Van der Waals Heterogeneous Interfaces
• Quasiparticle gap renormalization driven by internal and external screening in a WS${}_2$ device
• Bias Free Gap Creation in Bilayer Graphene