Effect of C-face 4H-SiC(0001) deposition on thermopower of single and multilayer graphene in AA, AB and ABC stacking

Abstract

The Seebeck coefficient in multilayer graphene is investigated within the density-functional theory, using the semiclassical Boltzmann equations and interpolating the bands in a maximally-localized Wannier functions basis set. We compare various graphene stackings (AA, AB and ABC) both free-standing and deposited on a $4H$-SiC(0001) C-terminated substrate. We find that the presence of the SiC substrate can significantly affect the thermopower properties of graphene layers, depending on the stacking, providing a promising way to tailor efficient graphene-based devices.

arXiv comment7 pages, 4 figures

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• Thermoelectric and thermospin transport in a ballistic junction of graphene
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• Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face