Thermoelectric and thermospin transport in a ballistic junction of graphene
arXiv:1504.04265 · doi:10.1103/PhysRevB.92.085418
Abstract
We consider theoretically a wide graphene ribbon, that on both ends is attached to electronic reservoirs which generally have different temperatures. The graphene ribbon is assumed to be deposited on a substrate, that leads to a spin-orbit coupling of Rashba type. We calculate the thermally induced charge current in the ballistic transport regime as well as the thermoelectric voltage (Seebeck effect). Apart from this, we also consider thermally induced spin current and spin polarization of the graphene ribbon. The spin currents are shown to have generally two components; one parallel to the temperature gradient and the other one perpendicular to this gradient. The latter corresponds to the spin current due to the spin Nernst effect. Additionally, we also consider the heat current between the reservoirs due to transfer of electrons.
References in corpus (17)
- The electronic properties of graphene
- Chiral tunneling and the Klein paradox in graphene
- Micrometer-scale ballistic transport in encapsulated graphene at room temperature
- Thermoelectric and Magnetothermoelectric Transport Measurements of Graphene
- Electronic transport in graphene: A semi-classical approach including midgap states
- Josephson effect in ballistic graphene
- Thermal and Thermoelectric Properties of Graphene
- Slow imbalance relaxation and thermoelectric transport in graphene
- Charge and spin Hall conductivity in metallic graphene
- Electron-phonon mediated heat flow in disordered graphene
- Current-induced spin polarization in graphene due to Rashba spin-orbit interaction
- Thermo-Electric Power of Dirac Fermions in Graphene
- Thermoelectric effects in graphene with local spin-orbit interaction
- Anomalous thermospin effect in the low-buckled Dirac materials
- Thermoelectric effect enhanced by the resonant states in graphene
- Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face
- Effect of C-face 4H-SiC(0001) deposition on thermopower of single and multilayer graphene in AA, AB and ABC stacking
Cited by in corpus (4)
- Spin-thermoelectric transport induced by interactions and spin-flip processes in two dimensional topological insulators
- Designing a highly efficient graphene quantum spin heat engine
- Spin-dependent thermoelectric effects in graphene based superconductor junctions
- Tunable magnetoresistance in spin-orbit coupled graphene junctions