Current-induced spin polarization in graphene due to Rashba spin-orbit interaction
arXiv:1310.1698 · doi:10.1103/PhysRevB.89.075422
Abstract
Spin polarization induced by an external electric field in graphene is considered theoretically in the linear response regime. The graphene is assumed to be deposited on a substrate which leads to the spin-orbit interaction of Rashba type. The induced spin polarization is shown to be in the graphene plane and perpendicular to the electric field. However, the spin polarization changes sign when the Fermi level, whose position can be controlled by an external gate voltage, crosses the Dirac points.
4 pages, 4 figures
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- Proximity effects in graphene on monolayers of transition-metal phosphorus trichalcogenides MPX
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- Strain Controlled Spin and Charge Pumping in Graphene Devices via Spin-orbit Coupled Barriers
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- Charge-spin interconversion in graphene-based systems from density functional theory
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- Ferroelectric switching control of spin current in graphene proximitized by InSe
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