Effect of charged impurities on graphene thermoelectric power near the Dirac point

Abstract

In graphene devices with a varying degree of disorders as characterized by their carrier mobility and minimum conductivity, we have studied the thermoelectric power along with the electrical conductivity over a wide range of temperatures. We have found that the Mott relation fails in the vicinity of the Dirac point in high-mobility graphene. By properly taking account of the high temperature effects, we have obtained good agreement between the Boltzmann transport theory and our experimental data. In low-mobility graphene where the charged impurities induce relatively high residual carrier density, the Mott relation holds at all gate voltages.

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• Hot carriers in graphene -- fundamentals and applications
• Enhanced Thermoelectric Power in Dual-Gated Bilayer Graphene
• Exceptional high Seebeck Coefficient and Gas-Flow-Induced Voltage in Multilayer Graphene
• THz detection with epitaxial graphene field effect transistors on silicon carbide
• Anomalous growth of thermoelectric power in gapped graphene
• Phonon drag thermopower in graphene in equipartition regime
• Tunable thermoelectricity in monolayers of MoS${}_2$ and other group-VI dichalcogenides
• Unconventional thermoelectric behaviors and enhancement of figure of merit in Rashba spintronic systems
• Anomalous thermospin effect in the low-buckled Dirac materials
• Enhanced Gas-Flow-Induced Voltage in Graphene
• Thermoelectric effect enhanced by the resonant states in graphene
• Thermoelectric and thermospin transport in a ballistic junction of graphene
• Derivative relations between electrical and thermoelectric quantum transport coefficients in graphene
• Anomalous thermoelectric properties of a Floquet topological insulator with spin momentum non-orthogonality
• Magnetothermoelectric effects in graphene and their dependence on scatterer concentration, magnetic field and band gap
• Effect of Coulomb Interaction on Seebeck Coefficient of Organic Dirac Electron System $\alpha$-(BEDT-TTF)${}_2$I${}_3$
• Drag of electrons in graphene by substrate surface polar phonons