Tunable thermoelectricity in monolayers of MoS${}_2$ and other group-VI dichalcogenides

Abstract

We study the thermoelectric properties of monolayers of MoS${}_2$ and other group-VI dichalcogenides under circularly polarized off-resonant light. Analytical expressions are derived for the Berry phase mediated magnetic moment, orbital magnetization, as well as thermal and Nernst conductivities. Tuning of the band gap by {\it off-resonant} light enhances the spin splitting in both the valence and conduction bands and, thus, leads to a dramatic improvement of the spin and valley thermoelectric properties.

arXiv comment10 pages and 6 figs

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Cited by in corpus (10)

• Spin-orbital coupling effect on power factor in semiconducting transition-metal dichalcogenide monolayers
• Driven conductance of an irradiated semi-Dirac material
• Small compressive strain induced semiconductor-metal transition and tensile strain enhanced thermoelectric properties in monolayer $\mathrm{PtT}{\mathrm{e}}_2$
• Electron Transport and Thermoelectric Performance of Defected Monolayer MoS2
• Probing Topological signatures in an optically driven $\alpha$-$T_3$ Lattice
• Valley Degree of Freedom in Two-Dimensional van der Waals Materials
• Photoinduced spin-Hall resonance in a k^3-Rashba spin-orbit coupled two dimensional hole system
• Off-resonant light-induced topological phase transition and thermoelectric transport in semi-Dirac materials
• Photo-induced spin and valley-dependent Seebeck effect in the low-buckled Dirac materials
• Photoinduced metallic Volkov-Pankratov states in semi-Dirac material