Observation of the Spin-Seebeck Effect in a Ferromagnetic Semiconductor

Abstract

The spin-Seebeck effect was recently discovered in a metallic ferromagnet and consists of a thermally generated spin distribution that is electrically measured utilizing the inverse spin Hall effect. Here this effect is reproduced experimentally in a ferromagnetic semiconductor, GaMnAs, which allows for flexible design of the magnetization directions, a larger spin polarization, and measurements across the magnetic phase transition. The spin-Seebeck effect in GaMnAs is observed even in the absence of longitudinal charge transport. The spatial distribution of spin-currents is maintained across electrical breaks highlighting the local nature of the effect, which is therefore ascribed to a thermally induced spin redistribution.

12 pages, 5 figures, plus supporting information 4 pages, 5 figures, 1 table

References in corpus (7)

• Dissipationless Quantum Spin Current at Room Temperature
• Spin Caloritronics
• Theory of magnon-driven spin Seebeck effect
• On A Proper Definition of Spin Current
• Performance of a spin-based insulated gate field effect transistor
• Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs
• Antisite effect on ferromagnetism in (Ga,Mn)As

Cited by in corpus (233)

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