Antisite effect on ferromagnetism in (Ga,Mn)As

Abstract

We study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1-2% Mn. Samples are grown by molecular beam epitaxy without substrate rotation in order to smoothly vary the As to Ga flux ratio across a single wafer. This technique allows for a systematic study of the effect of As stoichiometry on the structural, electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than 1.5% Mn, a strong deviation from Tc ~ p^0.33 is observed. Our results emphasize that proper control of As-antisite compensation is critical for controlling the Curie temperatures in (Ga,Mn)As at the low doping limit.

10 pages, 7 figures

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• Mn Interstitial Diffusion in (Ga,Mn)As
• Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
• Self-compensation in manganese-doped ferromagnetic semiconductors
• High quality GaMnAs films grown with As dimers
• Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wells
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• Influence of defects on the lattice constant of GaMnAs
• Metal-Insulator Transition and Ferromagnetism in Diluted Magnetic Semiconductors

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• Discovery of Griffiths phase in itinerant magnetic semiconductor Fe_{1-x}Co_xS_2
• Onset of ferromagnetism in low-doped GaMnAs
• Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs
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• Thermodynamic and thermoelectric properties of (Ga,Mn)As and related compounds
• Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices
• A new route to enhance the ferromagnetic transition temperature in diluted magnetic semiconductors
• Impact of Next-Nearest-Neighbor hopping on Ferromagnetism in Diluted Magnetic Semiconductors