Thickness dependence of magnetic properties of (Ga,Mn)As
arXiv:1205.4824 · doi:10.1063/1.4731202
Abstract
We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The effect already starts at the very beginning of the thinning process and is accompanied by the spin reorientation transition of the in-plane uniaxial anisotropy. We postulate that a negative gradient along the growth direction of self-compensating defects (Mn interstitial) and the presence of surface donor traps gives quantitative account on these effects within the p-d mean field Zener model with adequate mod- ifications to take a nonuniform distribution of holes and Mn cations into account. The described here effects are of practical importance for employing thin and ultrathin layers of (Ga,Mn)As or relative compounds in concept spintronics devices, like resonant tunneling devices in particular.
arXiv comment4 pages, 4 figures and supplementary information 2 pages, 1 figure
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Cited by in corpus (8)
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- All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy
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- Cubic anisotropy in high homogeneity thin (Ga,Mn)As layers
- Artificial control of the bias-voltage dependence of tunnelling anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
- Magnetic properties of wurtzite (Ga,Mn)As
- In Situ Compensation Method for Precise Integral SQUID Magnetometry of Miniscule Biological, Chemical, and Powder Specimens Requiring the Use of Capsules
- Ferromagnetic Resonance in a Magnetically Dilute Percolating Ferromagnet: An Experimental and Theoretical Study