Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy
arXiv:1502.06879 · doi:10.1116/1.2746351
Abstract
Mn concentration depth profiles in Mn-doped GaAs thin films grown at substrate temperatures of 580 and 250 °C using various Mn cell temperatures have been investigated with dynamic secondary ion mass spectrometry and Auger electron spectroscopy. When the samples are grown at a low substrate temperature of 250 °C, the Mn distributes uniformly. For the samples grown at a high substrate temperature of 580 °C, the concentration depth profiles are easily fitted with a temperature-dependent Fermi function only if the Mn concentration is above the solubility limit. However, when the Mn concentration is below the solubility limit, unexpected peaks are observed in the concentration depth profiles.
arXiv comment10 pages, 4 figures
References in corpus (7)
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
- Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors
- Saturated Ferromagnetism and Magnetization Deficit in Optimally Annealed (Ga,Mn)As Epilayers
- Fundamental Curie temperature limit in ferromagnetic GaMnAs
- High quality GaMnAs films grown with As dimers
- Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers
- Enhanced annealing effect in an oxygen atmosphere on GaMnAs