Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers

Abstract

The amount of ionized Mn acceptors in various p-type Mn-doped GaAs epilayers has been evaluated by electrochemical capacitance-voltage measurements, and has been compared systematically with concentrations of incorporated Mn atoms and holes for wide range of Mn concentration (10^17 ~ 10^21 cm^-3). Quantitative assessment of anomalous Hall effect at room temperature is also carried out for the first time.

arXiv comment8 pages, 4 figures, table

References in corpus (2)

• Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
• Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

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