Magnetic anisotropy switching in (Ga,Mn)As with increasing hole concentration
arXiv:cond-mat/0601603 · doi:10.1103/PhysRevB.74.045201
Abstract
We study a possible mechanism of the switching of the magnetic easy axis as a function of hole concentration in (Ga,Mn)As epilayers. In-plane uniaxial magnetic anisotropy along [110] is found to exceed intrinsic cubic magnetocrystalline anisotropy above a hole concentration of p = 1.5 * 10^21 cm^-3 at 4 K. This anisotropy switching can also be realized by post-growth annealing, and the temperature-dependent ac susceptibility is significantly changed with increasing annealing time. On the basis of our recent scenario [Phys. Rev. Lett. 94, 147203 (2005); Phys. Rev. B 73, 155204 (2006).], we deduce that the growth of highly hole-concentrated cluster regions with [110] uniaxial anisotropy is likely the predominant cause of the enhancement in [110] uniaxial anisotropy at the high hole concentration regime. We can clearly rule out anisotropic lattice strain as a possible origin of the switching of the magnetic anisotropy.
arXiv comment5 pages, 4 figures, to appear in Phys. Rev. B
References in corpus (16)
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
- Mn Interstitial Diffusion in (Ga,Mn)As
- Theory of Magnetic Anisotropy in III_{1-x}Mn_{x}V Ferromagnets
- Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
- In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films
- Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers
- Temperature Dependent Magnetic Anisotropy in (Ga,Ma)As Layers
- Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs
- Reorientation Transition in Single-Domain (Ga,Mn)As
- Ferromagnetism in Mn doped GaAs due to substitutional-interstitial complexes
- Electronic and magnetic properties of substitutional Mn clusters in (Ga,Mn)As
- Ferromagnetic resonance study of free hole contribution to magnetization and magnetic anisotropy in modulation-doped GaMnAs/GaAlAs:Be
- Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers
- Cross-sectional STM of Mn-doped GaAs: theory and experiment
- Mixed magnetic phases in (Ga,Mn)As epilayers
- Dynamic relaxation of magnetic clusters in a ferromagnetic (Ga,Mn)As epilayer
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- Femtosecond Control of the Magnetization in Ferromagnetic Semiconductors
- Cubic anisotropy in high homogeneity thin (Ga,Mn)As layers
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