Annealing-induced enhancement of ferromagnetism and nano-particle formation in ferromagnetic-semiconductor GeFe
arXiv:1402.7209 · doi:10.1103/PhysRevB.90.205209
Abstract
We report the annealing-induced enhancement of ferromagnetism and nano-particle formation in group-IV-based ferromagnetic-semiconductor GeFe. We successfully increase the Curie temperature of the Ge0.895Fe0.105 film up to ~220 K while keeping a single ferromagnetic phase when the annealing temperature is lower than 500°C. In contrast, when annealed at 600°C, single-crystal GeFe nano-particles with stacking faults and twins, which have a high Curie temperature nearly up to room temperature, are formed in the film. Our results show that annealing is quite effective to improve the magnetic properties of GeFe for high-temperature-operating spin-injection devices based on Si or Ge.
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Cited by in corpus (7)
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- Room temperature local ferromagnetism and nanoscale domain growth in the ferromagnetic semiconductor GeFe
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- Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb
- Electronic Structure of the Ferromagnetic Semiconductor Fe-doped Ge Revealed by Soft X-ray Angle-Resolved Photoemission Spectroscopy
- Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe
- Impurity band conduction in group-IV ferromagnetic semiconductor Ge1-xFex with nanoscale fluctuations in Fe concentration