19 citations · 82 across the 10 of their papers we have counts for
10 papers
Pauli spin blockade at room temperature in double-quantum-dot tunneling through individual deep dopants in silicon
Yoshisuke Ban, Kimihiko Kato, Shota Iizuka +6
Pauli spin blockade (PSB) is a spin-dependent charge transport process that typically appears in double quantum dot (QD) devices and is employed in fundamental research on single s…
Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit
Yoshisuke Ban, Kimihiko Kato, Shota Iizuka +5
To realize high-temperature operation of Si qubits, deep impurity levels with large confinement energy, which are hardly thermally excited, have been introduced into Si wafers. Gro…
Impurity band conduction in group-IV ferromagnetic semiconductor Ge1-xFex with nanoscale fluctuations in Fe concentration
Yoshisuke Ban, Yuki K. Wakabayashi, Ryosho Nakane +1
We study the carrier transport and magnetic properties of group-IV-based ferromagnetic semiconductor Ge1-xFex thin films (Fe concentration x = 2.3 - 14 %) with and without boron (B…
Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe
Yuki K. Wakabayashi, Kohei Okamoto, Yoshisuke Ban +3
Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the most promising materials for efficient spin injectors and detectors for Si and Ge. Recent first principles…
Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films
Yuki K. Wakabayashi, Ryota Akiyama, Yukiharu Takeda +9
GeMn granular thin films are a unique and promising material for spintronics applications due to large positive magnetoresistance (MR). Previous studies on GeMn have suggested that…
Electronic Structure of the Ferromagnetic Semiconductor Fe-doped Ge Revealed by Soft X-ray Angle-Resolved Photoemission Spectroscopy
Shoya Sakamoto, Yuki K. Wakabayashi, Yukiharu Takeda +7
GeFe (Ge:Fe) shows ferromagnetic behavior up to a relatively high temperature of 210 K, and hence is a promising material for spintronic applications compatible with…
Properties of group-IV-based ferromagnetic semiconductor GeFe: Growth temperature dependence, lattice constant, location of Fe atoms, and their relevance to the magnetic properties
Yuki Wakabayashi, Shinobu Ohya, Yoshisuke Ban +1
We report the growth temperature dependence of the properties of the group-IV-based ferromagnetic semiconductor Ge1-xFex films (x = 6.5% and 10.5%), including the lattice constant,…
Carrier transport properties of the Group-IV ferromagnetic semiconductor Ge1-xFex with and without boron doping
Yoshisuke Ban, Yuki Wakabayashi, Ryota Akiyama +2
We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge1-xFex films (x = 1.0 and 2.3 %) with and without boron doping grown by molecul…
Annealing-induced enhancement of ferromagnetism and nano-particle formation in ferromagnetic-semiconductor GeFe
Yuki Wakabayashi, Yoshisuke Ban, Shinobu Ohya +1
We report the annealing-induced enhancement of ferromagnetism and nano-particle formation in group-IV-based ferromagnetic-semiconductor GeFe. We successfully increase the Curie tem…
Spin-transfer torque in disordered weak ferromagnets
Yoshisuke Ban, Gen Tatara
We study theoretically the spin transfer effect on a domain wall in disordered weak ferromagnets. We have identified the adiabatic condition for the disordered case as $λ\gg λ_{\rm…