19 citations · 82 across the 10 of their papers we have counts for
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Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe
Yuki K. Wakabayashi, Kohei Okamoto, Yoshisuke Ban +3
Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the most promising materials for efficient spin injectors and detectors for Si and Ge. Recent first principles…
Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films
Yuki K. Wakabayashi, Ryota Akiyama, Yukiharu Takeda +9
GeMn granular thin films are a unique and promising material for spintronics applications due to large positive magnetoresistance (MR). Previous studies on GeMn have suggested that…
Electronic Structure of the Ferromagnetic Semiconductor Fe-doped Ge Revealed by Soft X-ray Angle-Resolved Photoemission Spectroscopy
Shoya Sakamoto, Yuki K. Wakabayashi, Yukiharu Takeda +7
GeFe (Ge:Fe) shows ferromagnetic behavior up to a relatively high temperature of 210 K, and hence is a promising material for spintronic applications compatible with…