Enhanced annealing effect in an oxygen atmosphere on GaMnAs
arXiv:cond-mat/0409720 · doi:10.1063/1.1886912
Abstract
We report on in-situ resistivity measurements on GaMnAs during post-growth annealing in different atmospheres. A drop in the resistivity is observed when the GaMnAs is exposed to oxygen, which indicates that the passivation of Mn interstitials (Mn_I) at the free surface occurs through oxidation. The presence of oxygen can therefore be an important annealing condition for the optimization of GaMnAs thin films, all the more since the oxidation appears to be limited to the sample surface. Annealing in an oxygen-free atmosphere leads to an increase in the resistivity indicating a second annealing mechanism besides the out-diffusion of Mn_I. According to our magnetization and Hall effect data, this mechanism reduces the amount of magnetically and electrically active Mn atoms.
3 pages, 3 figures
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- Magneto-optical and magnetotransport properties of heavily Mn-doped GaMnAs
- Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence
- Influence of annealing parameters on the ferromagnetic properties of optimally passivated (Ga,Mn)As epilayers
- Annealing-induced enhancement of ferromagnetism and nano-particle formation in ferromagnetic-semiconductor GeFe
- Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy