Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs

Abstract

The recently reported Rutherford backscattering and particle-induced X-ray emission experiments have revealed that in low-temperature MBE grown GaMnAs a significant part of the incorporated Mn atoms occupies tetrahedral interstitial sites in the lattice. Here we study the magnetic properties of these interstitial ions. We show that they do not participate in the hole-induced ferromagnetism. Moreover, Mn interstitial double donors may form pairs with the nearest substitutional Mn acceptors - our calculations evidence that the spins in such pairs are antiferromagnetically coupled by the superexchange. We also show that for the Mn ion in the other, hexagonal, interstitial position (which seems to be the case in the GaMnBeAs samples) the p-d interactions with the holes, responsible for the ferromagnetism, are very much suppressed.

4 pages, 3 figures, submitted to PRB

References in corpus (4)

• Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
• High Curie temperature GaMnAs obtained by resistance-monitored annealing
• Self-compensation in manganese-doped ferromagnetic semiconductors
• Structural and magnetic properties of GaMnAs layers with high Mn content grown by Migration Enhanced Epitaxy on GaAs(100) substrates

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