Effects of Capping on the (Ga,Mn)As Magnetic Depth Profile
arXiv:cond-mat/0409270 · doi:10.1063/1.1867292
Abstract
Annealing can increase the Curie temperature and net magnetization in uncapped (Ga,Mn)As films, effects that are suppressed when the films are capped with GaAs. Previous polarized neutron reflectometry (PNR) studies of uncapped (Ga,Mn)As revealed a pronounced magnetization gradient that was reduced after annealing. We have extended this study to (Ga,Mn)As capped with GaAs. We observe no increase in Curie temperature or net magnetization upon annealing. Furthermore, PNR measurements indicate that annealing produces minimal differences in the depth-dependent magnetization, as both as-grown and annealed films feature a significant magnetization gradient. These results suggest that the GaAs cap inhibits redistribution of interstitial Mn impurities during annealing.
arXiv comment12 pages, 3 figures, submitted to Applied Physics Letters
References in corpus (8)
- Mn Interstitial Diffusion in (Ga,Mn)As
- Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
- Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
- Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs
- Fundamental Curie temperature limit in ferromagnetic GaMnAs
- Lattice constant variation and complex formation in zincblende Gallium Manganese Arsenide
- Annealing-Dependent Magnetic Depth Profile in Ga[1-x]Mn[x]As
- Capping-induced suppression of annealing in Ga(1-x)Mn(x)As epilayers
Cited by in corpus (4)
- Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study
- Compensation, interstitial defects and ferromagnetism in diluted semiconductors
- Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence
- Magnetic and chemical nonuniformity in Ga[1-x]Mn[x]As films as probed by polarized neutron and x-ray reflectometry