Mn Interstitial Diffusion in (Ga,Mn)As

Abstract

We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, and resistivity measurements during annealing, show that the observed changes are due to out-diffusion of Mn interstitials towards the surface, governed by an energy barrier of about 0.7-0.8 eV. The Mn interstitial is a double donor resulting in compensation of charge carriers and suppression of ferromagnetism. Electric fields induced by high concentrations of substitutional Mn acceptors have a significant effect on the diffusion.

5 pages, 4 figures, submitted to Physical Review Letters

References in corpus (9)

• Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
• High Curie temperature GaMnAs obtained by resistance-monitored annealing
• Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
• Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs
• Self-compensation in manganese-doped ferromagnetic semiconductors
• DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors
• High quality GaMnAs films grown with As dimers
• Capping-induced suppression of annealing in Ga(1-x)Mn(x)As epilayers
• Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

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