High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As

Abstract

We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both TC and the electrical conductivity increase monotonically with increasing p, and take their largest values when p is comparable to the concentration of substitutional Mn acceptors. This is inconsistent with models in which the Fermi level is located within a narrow isolated impurity band.

10 pages, 4 figures

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• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
• Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism
• Spin-Resolved Self-Doping Tunes the Intrinsic Half-Metallicity of AlN Nanoribbons
• High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers
• Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As
• Temperature dependence of spin-orbit torque effective fields in the diluted magnetic semiconductor (Ga,Mn)As
• Generation and control of spin-polarized photocurrents in GaMnAs heterostructures
• Ferromagnetic Resonance in a Magnetically Dilute Percolating Ferromagnet: An Experimental and Theoretical Study