491 citations · 3.7k across the 50 of their papers we have counts for
50 papers
High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As
M. Wang, K. W. Edmonds, B. L. Gallagher +7
We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analys…
Anisotropic Current-Controlled Magnetization Reversal in the Ferromagnetic Semiconductor (Ga,Mn)As
Yuanyuan Li, Y. F. Cao, G. N. Wei +8
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The effici…
Correspondence on "Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band" by M. Dobrowolska et al
K. W. Edmonds, B. L. Gallagher, M. Wang +7
Comment on the recent Nature Materials article by M. Dobrowolska et al., arXiv:1203.1852. We present experimental data showing that the Curie temperature and conductivity of high q…
Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As
J. Masek, F. Maca, J. Kudrnovsky +10
We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and…
Antiferromagnetic I-Mn-V semiconductors
T. Jungwirth, V. Novak, X. Marti +14
After decades of research, the low Curie temperature of ferromagnetic semiconductors remains the key problem in the development of magnetic semiconductor spintronic technologies. R…
Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing
A. Casiraghi, A. W. Rushforth, M. Wang +8
We have investigated the effects of post growth low temperature annealing on the magnetic, electrical and structural properties of (Ga_0.94,Mn_0.06)(As_0.9,P_0.1) layers grown by m…