491 citations · 3.7k across the 50 of their papers we have counts for
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Achieving High Curie Temperature in (Ga,Mn)As
M Wang, R P Campion, A W Rushforth +3
We study the effects of growth temperature, Ga:As ratio and post-growth annealing procedure on the Curie temperature, Tc, of (Ga,Mn)As layers grown by molecular beam epitaxy. We ac…
Molecular Beam Epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis
A W Rushforth, M Wang, N R S Farley +5
We present an experimental investigation of the magnetic, electrical and structural properties of Ga0.94Mn0.06As1-yPy layers grown by molecular beam epitaxy on GaAs substrates for…
Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning
K Y Wang, A C Irvine, J Wunderlich +6
We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic an…
Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions
A. D. Giddings, O. N. Makarovsky, M. N. Khalid +8
We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The…
Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As
E. De Ranieri, A. W. Rushforth, K. Vyborny +8
It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)As are sensitive to lattice strains as small as 10^-4 and that strain can be controlled by lattice parameter…
Nonvolatile ferroelectric control of ferromagnetism in (Ga,Mn)As
I. Stolichnov, S. W. E. Riester, H. J. Trodahl +7
There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and sp…