Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures
arXiv:0801.0886 · doi:10.1103/PhysRevB.78.085314
Abstract
We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis which is detected by measuring longitudinal and transverse anisotropic magnetoresistance coefficients. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As provide microscopic understanding of the measured effect. Electrically induced magnetization switching and detection of unconventional crystalline components of the anisotropic magnetoresistance are presented, illustrating the generic utility of the piezo voltage control to provide new device functionalities and in the research of micromagnetic and magnetotransport phenomena in diluted magnetic semiconductors.
Submitted to Physical Review Letters. Updates version 1 to include a more detailed discussion of the effect of strain on the anisotropic magnetoresistance
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Cited by in corpus (4)
- Nonvolatile ferroelectric control of ferromagnetism in (Ga,Mn)As
- Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As
- Low voltage control of ferromagnetism in a semiconductor p-n junction
- Manipulation of the magnetic configuration of (Ga,Mn)As nanostructures