Piezoelectric strain induced variation of the magnetic anisotropy in a high Curie temperature (Ga,Mn)As sample
arXiv:1205.3725 · doi:10.1063/1.4746250
Abstract
We show that effective electrical control of the magnetic properties in the ferromagnetic semiconductor (Ga,Mn)As is possible using the strain induced by a piezoelectric actuator even in the limit of high doping levels and high Curie temperatures, where direct electric gating is not possible. We demonstrate very large and reversible rotations of the magnetic easy axis. We compare the results obtained from magneto-transport and SQUID magnetometry measurements, extracting the dependence of the piezo-induced uniaxial magnetic anisotropy constant upon strain in both cases and detailing the limitations encountered in the latter approach.
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Cited by in corpus (3)
- Dilute ferromagnetic semiconductors: Physics and spintronic structures
- Critical role of the sample preparation in experiments using piezoelectric actuators inducing uniaxial or biaxial strains
- Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling