Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

Abstract

We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe81Ga19 film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the modification of the magnetic anisotropy by mechanical strain induced by a piezoelectric transducer attached to the layer. Epitaxial Fe81Ga19 is shown to possess the favourable combination of cubic magnetic anisotropy and large magnetostriction necessary to achieve this functionality with experimentally accessible levels of strain. The switching of the magnetization proceeds by the motion of magnetic domain walls, also controlled by the voltage induced strain.

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• Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
• Voltage controlled inversion of magnetic anisotropy in a ferromagnetic thin film at room temperature
• Nonvolatile ferroelectric control of ferromagnetism in (Ga,Mn)As
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• Electrical manipulation of magnetic anisotropy in a Fe${}_{81}$Ga${}_{19}$/PMN-PZT magnetoelectric multiferroic composite
• A Critical Analysis of the Feasibility of Pure Strain-Actuated Giant Magnetostrictive Nanoscale Memories
• Optical excitation of single- and multi-mode magnetization precession in Galfenol nanolayers
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• Braiding Majorana Zero Mode in An Electrically Controllable Way
• Driving large-velocity propagation of ferromagnetic pi/2 domain walls in nanostripes of cubic-anisotropy materials
• Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19
• Multi-Fields Modulation of Physical Properties of Oxide Thin Films