Strain control of magnetic anisotropy in (Ga,Mn)As microbars

Abstract

We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive lattice strain. Structural properties of the (Ga,Mn)As microbars are investigated by high-resolution X-ray diffraction measurements. The experimental data, showing strong strain relaxation effects, are in good agreement with finite element simulations. SQUID magnetization measurements are performed to study the control of magnetic anisotropy in (Ga,Mn)As by the lithographically induced strain relaxation of the microbars. Microscopic theoretical modeling of the anisotropy is performed based on the mean-field kinetic-exchange model of the ferromagnetic spin-orbit coupled band structure of (Ga,Mn)As. Based on the overall agreement between experimental data and theoretical modeling we conclude that the micropatterning induced anisotropies are of the magnetocrystalline, spin-orbit coupling origin.

11 pages, 18 figures

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• Theory of ferromagnetic (III,Mn)V semiconductors
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• GaMnAs-based hybrid multiferroic memory device
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• Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19
• Micromagnetic study of a feasibility of the magnetic anisotropy engineering in nano-structured epitaxial films of (III,Mn)V ferromagnetic semiconductors
• Magnetization Saturation Process in the Magnonic Anti-dot Structures Based on (Ga,Mn)As: A Magnetometric Study