Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device

Abstract

Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we study transport through a constriction separating two regions whose magnetization direction differs by 90 degrees. We find that the resistance of the constriction depends on the flow of the magnetic field lines in the constriction region and demonstrate that such a structure constitutes a non-volatile memory device.

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Cited by in corpus (16)

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• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
• Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As
• Photo-induced precession of magnetization in ferromagnetic (Ga,Mn)As
• Magneto crystalline anisotropies in (Ga,Mn)As: A systematic theoretical study and comparison with experiment
• Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching
• Six-fold configurational anisotropy and magnetic reversal in nanoscale Permalloy triangles
• Fully electrically read-write device out of a ferromagnetic semiconductor
• Strain control of magnetic anisotropy in (Ga,Mn)As microbars
• Transport through (Ga,Mn)As nanoislands: Coulomb-blockade and temperature dependence of the conductance
• Carrier-density-controlled anisotropic spin susceptibility of two-dimensional hole systems
• Strain dependence of the Mn anisotropy in ferromagnetic semiconductors observed by x-ray magnetic circular dichroism
• External Control of a Metal-Insulator Transition in GaMnAs Wires
• Manipulation of the magnetic configuration of (Ga,Mn)As nanostructures
• Double island Coulomb blockade in (Ga,Mn)As-nanoconstrictions
• Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer