Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer

Abstract

We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer.

5 pages, 7 figures

References in corpus (5)

• GaMnAs-based hybrid multiferroic memory device
• Control of magnetic anisotropy in (Ga,Mn)As by lithography-induced strain relaxation
• Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As
• Lithographic engineering of anisotropies in (Ga,Mn)As
• Bound hole states in a ferromagnetic (Ga,Mn)As environment