Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer

Abstract

We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer.

arXiv comment5 pages, 7 figures

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