Bound hole states in a ferromagnetic (Ga,Mn)As environment

Abstract

A numerical technique is developed to solve the Luttinger-Kohn equation for impurity states directly in k-space and is applied to calculate bound hole wave functions in a ferromagnetic (Ga,Mn)As host. The rich properties of the band structure of an arbitrarily strained, ferromagnetic zinc-blende semiconductor yields various features which have direct impact on the detailed shape of a valence band hole bound to an active impurity. The role of strain is discussed on the basis of explicit calculations of bound hole states.

9 pages, 10 figures

References in corpus (10)

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• Temperature Dependent Magnetic Anisotropy in (Ga,Ma)As Layers
• 1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack
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Cited by in corpus (5)

• Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device
• Fully electrically read-write device out of a ferromagnetic semiconductor
• Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach
• Fine structure of neutral acceptor states of isolated impurity in zinc-blende semiconductors
• Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer