Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach
arXiv:1201.1439 · doi:10.1063/1.3683525
Abstract
Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier. Significant anisotropies in both in-plane and out-of-plane geometries are found, resulting from the combination of the large spin-orbit coupling associated with the p-d exchange interaction, cubic anisotropy of heavy-hole dispersion and the low C2v symmetry of the chemical bonds.
4 pages, 3 figures
References in corpus (6)
- STM images of sub-surface Mn atoms in GaAs: evidence of hybridization of surface and impurity states
- Magnetic anisotropy of singly Mn-doped InAs/GaAs quantum dots
- Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device
- Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zincblende semiconductor
- Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers
- Bound hole states in a ferromagnetic (Ga,Mn)As environment