activity
20122019
most citedSpin Pumping and Inverse Spin Hall Effect in Platinum: The Essential Role of Spin-Memory Loss at Metallic Interfaces

677 citations · 1.3k across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2019★ 22 cited

Unconventional anomalous Hall effect in 3d/5d multilayers mediated by the nonlocal spin-conductivity

T. Huong Dang, Q. Barbedienne, Q. D. To +6

We evidenced unconventionnal Anomalous Hall Effects (AHE) in 3d/5d (Co0.2nm/Ni0.6nm)N multilayers grown on a thin Pt layer or thin Au:W alloy. The inversion observed on AHE origina…

cond-mat.mtrl-sci2016★ 535 cited

Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces

E. Lesne, Y. Fu, S. Oyarzun +13

The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin cur…

cond-mat.mes-hall2015★ 17 cited

Giant Forward Scattering Asymmetry and Anomalous Tunnel Hall effect at Spin-Orbit-and Exchange-Split Interfaces

T. Huong Dang, H. Jaffrès, T. L. Hoai Nguyen +1

We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving s…

cond-mat.mes-hall2015★ 1 cited

Evaluation of the spin diffusion length of AuW alloy by spin absorption experiments in the limit of large spin-orbit interactions

P. Laczkowski, H. Jaffrès, W. Savero-Torres +10

The knowledge of the spin diffusion length is a prerequisite for the estimation of the spin Hall angle. We investigate spin current absorption of materials with small $λ_{A…

cond-mat.mes-hall2013★ 677 cited

Spin Pumping and Inverse Spin Hall Effect in Platinum: The Essential Role of Spin-Memory Loss at Metallic Interfaces

J. -C. Rojas-Sánchez, N. Reyren, P. Laczkowski +7

Through combined ferromagnetic resonance, spin-pumping and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of spin d…

cond-mat.mes-hall2012★ 6 cited

Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach

M. O. Nestoklon, O. Krebs, H. Jaffrès +4

Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor…