Fine structure of neutral acceptor states of isolated impurity in zinc-blende semiconductors

Abstract

The properties of neutral acceptor states in zinc-blende semiconductors are re-examined in the frame of extended-basis $s{p}^3{d}^5{s}^{\ast }$ tight-binding model. The symmetry discrepancy between envelope function theory and atomistic calculations is explained in terms of over symmetric potential in current k$\cdot$p approaches. Spherical harmonics decomposition of microscopic Local Density Of States (LDOS) allows for the direct analysis of the tight-binding results in terms of envelope function. Lifting of degeneracy by strain and electric field and their effect on LDOS is examined. The fine structure of magnetic impurity caused by exchange interaction of hole with impurity $d$-shell and its dependence on strain is studied. It is shown that exchange interaction by mixing heavy and light hole makes the ground state more isotropic. The results are important in the context of Scanning Tunneling Microscopy (STM) images of subsurface impurities.

11 pages, 9 figures

References in corpus (14)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Spatial structure of an individual Mn acceptor in GaAs
• Optically probing the fine structure of a single Mn atom in an InAs quantum dot
• Multiband tight-binding model of local magnetism in GaMnAs
• Spin and valley-orbit splittings in SiGe/Si heterostructures
• Electric field effect on electron spin splitting in SiGe/Si quantum wells
• All-electrical control of single ion spins in a semiconductor
• Tetragonal and trigonal deformations in zinc-blende semiconductors : a tight-binding point of view
• STM images of sub-surface Mn atoms in GaAs: evidence of hybridization of surface and impurity states
• Suppression of electron spin relaxation in Mn-doped GaAs
• Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zincblende semiconductor
• Mapping the wavefunction of transition metal acceptor states in the GaAs surface
• Electronic structure and magnetic properties of Mn and Fe impurities near GaAs (110) surface
• Bound hole states in a ferromagnetic (Ga,Mn)As environment

Cited by in corpus (2)

• Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation
• Exchange interaction for Mn acceptor in GaAs: revealing its strong deformation dependence