2.8k citations
- University College CorkIE88 papers
- Centre National de la Recherche ScientifiqueFR11 papers
- Imperial College LondonGB7 papers
- Advanced Materials and BioEngineering ResearchIE6 papers
- Queen's University BelfastGB6 papers
- Trinity College DublinIE6 papers
- Cork Institute of TechnologyIE5 papers
- Ioffe InstituteRU5 papers
- Munster Technological UniversityIE5 papers
- SLAC National Accelerator LaboratoryUS4 papers
- Stanford UniversityUS4 papers
- Brookhaven National LaboratoryUS3 papers
112 papers
Conductive Paintable 2D Layered MoS2 Inks
Elaine Carroll, Darragh Buckley, David McNulty +1
Conductive and paintable inks of 2D layered MoS2 with aspect ratio-dependent conductivity are demonstrated. Using ultrasonically assisted solvent-exfoliation of MoS2, high concentr…
Towards temperature-induced topological phase transition in SnTe: A first principles study
José D. Querales-Flores, Pablo Aguado-Puente, Đorđe Dangić +6
The temperature renormalization of the bulk band structure of a topological crystalline insulator, SnTe, is calculated using first principles methods. We explicitly include the eff…
study of pressure-induced topological insulator transition in group IV-tellurides
Pablo Aguado-Puente, Stephen Fahy, Myrta Grüning
We calculate the electronic structure of the narrow gap semiconductors PbTe, SnTe and GeTe in the cubic phase using density functional theory (DFT) and the method. Within…
Distributing entanglement with separable states: assessment of encoding and decoding imperfections
Hannah McAleese, Gediminas Juska, Iman Ranjbar Jahromi +3
Entanglement can be distributed using a carrier which is always separable from the rest of the systems involved. Up to now, this effect has predominantly been analyzed in the case…
Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem
Daniel S. P. Tanner, Philip Dawson, Menno J. Kappers +2
We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special at…
Architected Porous Metals in Electrochemical Energy Storage
Vladimir Egorov, Colm O'Dwyer
Porous metallic structures are regularly used in electrochemical energy storage devices as supports, current collectors or active electrode materials. Bulk metal porosification, de…