C. Broderick

activity

20112024

most citedTight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs

212 citations · 845 across the 22 of their papers we have counts for

collaborators

23 papers

cond-mat.mtrl-sci2024

First-principles theory of direct-gap optical emission in hexagonal Ge and its enhancement via strain engineering

Christopher A. Broderick, Xie Zhang, Mark E. Turiansky +1

The emergence of hexagonal Ge (2H-Ge) as a candidate direct-gap group-IV semiconductor for Si photonics mandates rigorous understanding of its optoelectronic properties. Theoretica…

cond-mat.mtrl-sci2023★ 5 cited

Theory and optimisation of radiative recombination in broken-gap InAs/GaSb superlattices

Cónal Murphy, Eoin P. O'Reilly, Christopher A. Broderick

We present a theoretical analysis of mid-infrared radiative recombination in InAs/GaSb superlattices (SLs). We employ a semi-analytical plane wave expansion method in conjunction w…

cond-mat.mtrl-sci2021

Raman spectroscopy of group-IV Ge $_{1 - x}$ Sn $_{x}$ alloys: theory and experiment

Daniel S. P. Tanner, Sreyan Raha, Jessica Doherty +5

Ge $_{1 - x}$ Sn $_{x}$ alloys are a promising candidate material to realise direct-gap group-IV semiconductors for applications in Si-compatible electronic and photonic devices. Here,…

cond-mat.mtrl-sci2021

Fully analytic valence force fields for the relaxation of group-IV semiconductor alloys: elastic properties of group-IV materials calculated from first principles

Daniel S. P. Tanner, Christopher A. Broderick, Amy C. Kirwan +2

Si $_{y}$ Ge $_{1 - x - y}$ (C,Sn,Pb) $_{x}$ alloys have attracted significant attention as a route to achieve a direct-gap group-IV semiconductor. Using density functional theory (DFT) - e…

cond-mat.mtrl-sci2021★ 8 cited

Electronic and optical properties of Si $_{x}$ Ge $_{1 - x - y}$ Sn $_{y}$ alloys lattice-matched to Ge

Phoebe M. Pearce, Christopher A. Broderick, Michael P. Nielsen +2

We present a combined experimental and theoretical analysis of the evolution of the near-band gap electronic and optical properties of Si $_{x}$ Ge $_{1 - x - y}$ Sn $_{y}$ alloys lattice-m…

cond-mat.mtrl-sci2021

Impact of band-anticrossing on band-to-band tunneling in highly-mismatched semiconductor alloys

Sarita Das, Christopher A. Broderick, Eoin P. O'Reilly

We theoretically analyse band-to-band tunneling (BTBT) in highly-mismatched, narrow-gap dilute nitride and bismide alloys, and quantify the impact of the N- or Bi-induced perturbat…

First-principles theory of direct-gap optical emission in hexagonal Ge and its enhancement via strain engineering

Theory and optimisation of radiative recombination in broken-gap InAs/GaSb superlattices

Raman spectroscopy of group-IV Ge1−x​Snx​ alloys: theory and experiment

Fully analytic valence force fields for the relaxation of group-IV semiconductor alloys: elastic properties of group-IV materials calculated from first principles

Electronic and optical properties of Six​Ge1−x−y​Sny​ alloys lattice-matched to Ge

Impact of band-anticrossing on band-to-band tunneling in highly-mismatched semiconductor alloys

Raman spectroscopy of group-IV Ge $_{1 - x}$ Sn $_{x}$ alloys: theory and experiment

Electronic and optical properties of Si $_{x}$ Ge $_{1 - x - y}$ Sn $_{y}$ alloys lattice-matched to Ge