12-band $\text{k}\cdot \text{p}$ model for dilute bismide alloys of (In)GaAs derived from supercell calculations

Abstract

Incorporation of bismuth (Bi) in dilute quantities in (In)GaAs has been shown to lead to unique electronic properties that can in principle be exploited for the design of high efficiency telecomm lasers. This motivates the development of simple models of the electronic structure of these dilute bismide alloys, which can be used to evaluate their potential as a candidate material system for optical applications. Here, we begin by using detailed calculations based on an $s{p}^3{s}^{\ast }$ tight-binding model of (In)GaBi${}_x$As${}_{1-x}$ to verify the presence of a valence band-anticrossing interaction in these alloys. Based on the tight-binding model the derivation of a 12-band $\text{k}\cdot \text{p}$ Hamiltonian for dilute bismide alloys is outlined. We show that the band structure obtained from the 12-band model is in excellent agreement with full tight-binding supercell calculations. Finally, we apply the 12-band model to In${}_{0.53}$Ga${}_{0.47}$Bi${}_x$As${}_{1-x}$ and compare the calculated variation of the band gap and spin-orbit-splitting to a variety of spectroscopic measurements performed on a series of MBE-grown In${}_{0.53}$Ga${}_{0.47}$Bi${}_x$As${}_{1-x}$/InP layers.

References in corpus (2)

• Band engineering in dilute nitride and bismide semiconductor lasers
• Derivation of 12- and 14-band $\text{k}\cdot \text{p}$ Hamiltonians for dilute bismide and bismide-nitride semiconductors

Cited by in corpus (7)

• Impact of alloy disorder on the band structure of compressively strained GaBiAs
• Derivation of 12- and 14-band $\text{k}\cdot \text{p}$ Hamiltonians for dilute bismide and bismide-nitride semiconductors
• Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBi${}_x$As${}_{1-x}$/GaAs epilayers
• Impact of disorder on the optoelectronic properties of GaN${}_y$As${}_{1-x-y}$Bi${}_x$ alloys and heterostructures
• Theory and design of In${}_x$Ga${}_{1-x}$As${}_{1-y}$Bi${}_y$ mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 $\mu$m on InP substrates
• Towards low-loss telecom-wavelength photonic devices by designing GaBi${}_x$As${}_{1-x}$/GaAs core$-$shell nanowires
• Tunable band-gap and isotropic light absorption from bismuth-containing GaAs core$-$shell and multi$-$shell nanowires