Towards low-loss telecom-wavelength photonic devices by designing GaBiAs/GaAs coreshell nanowires
arXiv:1909.08312 · doi:10.1039/C9NR07237C
Abstract
Nanowires are versatile nanostructures, which allow an exquisite control over bandgap energies and charge carrier dynamics making them highly attractive as building blocks for a broad range of photonic devices. For optimal solutions concerning device performance and cost, a crucial element is the selection of a suitable material system which could enable a large wavelength tunability, strong light interaction and simple integration with the mainstream silicon technologies. The emerging GaBiAs alloys offer such promising features and may lead to a new era of technologies. Here, we apply million-atom atomistic simulations to design GaBiAs/GaAs core-shell nanowires suitable for low-loss telecom-wavelength photonic devices. The effects of internal strain, Bi Composition (x), random alloy configuration, and core-to-shell diameter ratio () are analysed and delineated by systematically varying these attributes and studying their impact on the absorption wavelength and charge carrier confinement. The complex interplay between x and results in two distinct pathways to accomplish 1.55 um optical transitions: either fabricate nanowires with 0.8 and 15\%, or increase to 30\% with 0.4. Upon further analysis of the electron hole wave functions, inhomogeneous broadening and optical transition strengths, the nanowires with 0.4 are unveiled to render favourable properties for the design of photonic devices. Another important outcome of our study is to demonstrate the possibility of modulating the strain character from a compressive to a tensile regime by simply engineering the thickness of the core region. The availability of such a straightforward knob for strain manipulation would be highly desirable for devices involving polarisation-sensitive light interactions.
arXiv commentFixed some typos compared to the previous version and added journal DOI
References in corpus (17)
- Nanolasers grown on silicon
- GaAs/AlGaAs Nanowire Photodetector
- Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
- Band engineering in dilute nitride and bismide semiconductor lasers
- Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots
- Impact of alloy disorder on the band structure of compressively strained GaBiAs
- Derivation of 12- and 14-band Hamiltonians for dilute bismide and bismide-nitride semiconductors
- Moving towards nano-TCAD through multimillion atom quantum dot simulations matching experimental data
- Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures
- Experimental and Atomistic Theoretical Study of Degree of Polarization from Multi-layer InAs/GaAs Quantum Dots
- 12-band model for dilute bismide alloys of (In)GaAs derived from supercell calculations
- Configuration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys
- Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBiAs/GaAs epilayers
- Impact of disorder on the optoelectronic properties of GaNAsBi alloys and heterostructures
- Atomistic tight-binding study of electronic structure and interband optical transitions in GaBiAs/GaAs quantum wells
- Large-scale atomistic simulations demonstrate dominant alloy disorder effects in GaBiAs/GaAs multiple quantum wells
- Atomistic tight binding study of quantum confined Stark effect in GaBiAs/GaAs quantum wells