212 citations · 845 across the 22 of their papers we have counts for
5 papers · 1 filter
Raman spectroscopy of group-IV GeSn alloys: theory and experiment
Daniel S. P. Tanner, Sreyan Raha, Jessica Doherty +5
GeSn alloys are a promising candidate material to realise direct-gap group-IV semiconductors for applications in Si-compatible electronic and photonic devices. Here,…
Fully analytic valence force fields for the relaxation of group-IV semiconductor alloys: elastic properties of group-IV materials calculated from first principles
Daniel S. P. Tanner, Christopher A. Broderick, Amy C. Kirwan +2
SiGe(C,Sn,Pb) alloys have attracted significant attention as a route to achieve a direct-gap group-IV semiconductor. Using density functional theory (DFT) - e…
Electronic and optical properties of SiGeSn alloys lattice-matched to Ge
Phoebe M. Pearce, Christopher A. Broderick, Michael P. Nielsen +2
We present a combined experimental and theoretical analysis of the evolution of the near-band gap electronic and optical properties of SiGeSn alloys lattice-m…
Impact of band-anticrossing on band-to-band tunneling in highly-mismatched semiconductor alloys
Sarita Das, Christopher A. Broderick, Eoin P. O'Reilly
We theoretically analyse band-to-band tunneling (BTBT) in highly-mismatched, narrow-gap dilute nitride and bismide alloys, and quantify the impact of the N- or Bi-induced perturbat…
Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors
Oussama Moutanabbir, Simone Assali, Xiao Gong +9
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant th…