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20112024
most citedTight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs

212 citations · 845 across the 22 of their papers we have counts for

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cond-mat.mtrl-sci2024

First-principles theory of direct-gap optical emission in hexagonal Ge and its enhancement via strain engineering

Christopher A. Broderick, Xie Zhang, Mark E. Turiansky +1

The emergence of hexagonal Ge (2H-Ge) as a candidate direct-gap group-IV semiconductor for Si photonics mandates rigorous understanding of its optoelectronic properties. Theoretica…