activity
20052023
most citedTheory of local electric polarization and its relation to internal strain: impact on the polarization potential and electronic properties of group-III nitrides

126 citations · 719 across the 23 of their papers we have counts for

collaborators

24 papers

cond-mat.mtrl-sci2023

Electronic and optical properties of boron containing GaN alloys: The role boron atom clustering

Cara-Lena Nies, Thomas P. Sheerin, Stefan Schulz

Boron (B) containing III-nitride materials, such as wurtzite (B,Ga)N alloys, have recently attracted significant interest to tailor the electronic and optical properties of optoele…

cond-mat.mes-hall2022★ 1 cited

Impact of random alloy fluctuations on the carrier distribution in multi-color (In,Ga)N/GaN quantum well systems

Michael O'Donovan, Patricio Farrell, Julien Moatti +3

In this work, we study the impact that random alloy fluctuations have on the distribution of electrons and holes across the active region of a (In,Ga)N/GaN multi-quantum well based…

cond-mat.mes-hall2022★ 21 cited

Impact of random alloy fluctuations on the electronic and optical properties of (Al,Ga)N quantum wells: Insights from tight-binding calculations

Robert Finn, Stefan Schulz

Light emitters based on the semiconductor alloy aluminium gallium nitride ((Al,Ga)N) have gained significant attention in recent years due to their potential for a wide range of ap…

cond-mat.mes-hall2021

Multiscale simulations of uni-polar hole transport in (In,Ga)N quantum well systems

Michael O'Donovan, Patricio Farrell, Timo Streckenbach +2

Understanding the impact of the alloy micro-structure on carrier transport becomes important when designing III-nitride-based LED structures. In this work, we study the impact of a…

cond-mat.mtrl-sci2021

Fully analytic valence force fields for the relaxation of group-IV semiconductor alloys: elastic properties of group-IV materials calculated from first principles

Daniel S. P. Tanner, Christopher A. Broderick, Amy C. Kirwan +2

SiGe(C,Sn,Pb) alloys have attracted significant attention as a route to achieve a direct-gap group-IV semiconductor. Using density functional theory (DFT) - e…

cond-mat.mes-hall2020

Indium gallium nitride quantum dots: Consequence of random alloy fluctuations for polarization entangled photon emission

Saroj Kanta Patra, Stefan Schulz

We analyze the potential of the -plane InGaN/GaN quantum dots for polarization entangled photon emission by means of an atomistic many-body framework. Special attention is paid…