activity
20052023
most citedTheory of local electric polarization and its relation to internal strain: impact on the polarization potential and electronic properties of group-III nitrides

126 citations · 719 across the 23 of their papers we have counts for

collaborators
Showing 2016Show all

4 papers · 1 filter

cond-mat.mes-hall2016★ 7 cited

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

D. Kundys, D. Sutherland, M. Davies +8

In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane fr…

cond-mat.mes-hall2016

Experimental and theoretical analyses of strongly polarized photon emission from non-polar InGaN quantum dots

Tong Wang, Tim J. Puchtler, Saroj Kanta Patra +7

We present a comprehensive investigation of the polarization properties of non-polar a-plane InGaN quantum dots (QDs) and their origin with statistically significant experimental d…

cond-mat.mtrl-sci2016★ 8 cited

Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots

R. Benchamekh, S. Schulz, E. P. O'Reilly

We use an tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots. Special atten…

cond-mat.mtrl-sci2016

Random alloy fluctuations and structural inhomogeneities in -plane InGaN quantum wells: theory of ground and excited electron and hole states

Daniel S. P. Tanner, Miguel A. Caro, Eoin P. O'Reilly +1

We present a detailed theoretical analysis of the electronic structure of -plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic struc…