Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

Abstract

We present an atomistic description of the electronic and optical properties of ${\text{In}}_{0.25}{\text{Ga}}_{0.75}$N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field fluctuations as well as Coulomb effects. We find a strong hole and much weaker electron wave function localization in InGaN random alloy quantum wells. The presented calculations show that while the electron states are mainly localized by well-width fluctuations, the holes states are already localized by random alloy fluctuations. These localization effects affect significantly the quantum well optical properties,leading to strong inhomogeneous broadening of the lowest interband transition energy. Our results are compared with experimental literature data.

arXiv comment14 pages, 10 figures

References in corpus (13)

• Spontaneous polarization and piezoelectric constants of III-V nitrides
• Comparison of two methods for describing the strain profiles in quantum dots
• Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
• Carrier localization mechanisms in InGaN/GaN quantum wells
• Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model
• Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions
• Hubbard-U calculations for Cu from first-principles Wannier functions
• Theory of local electric polarization and its relation to internal strain: impact on the polarization potential and electronic properties of group-III nitrides
• Multiband theory of multi-exciton complexes in self-assembled quantum dots
• Composition dependent band gap and band edge bowing in AlInN: A combined theoretical and experimental study
• Hybrid density functional calculations of the band gap of Ga${}_x$In${}_{1-x}$N
• Coulomb effects in semiconductor quantum dots
• Quantum-Confined Stark Effect in polar and nonpolar Wurtzite InN/GaN Heterostructures: Influence on Electronic Structure and Compensation by Coulomb Attraction

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• Localized Energy States Induced by Atomic-Level Interfacial Broadening in Heterostructures
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