Increased light-emission efficiency in disordered InGaN through the correlated reduction of recombination rates

Abstract

Experiments have shown that the light-emission efficiency of indium gallium nitride (InGaN) light-emitting diodes improves with increasing indium concentration. It is widely thought that compositional fluctuations due to indium incorporation suppress diffusion of carriers to non-radiative centers, thus leading to defect-insensitive emission. However, recent experiments have challenged this hypothesis by revealing unexpectedly long diffusion lengths at room temperature. Here, we demonstrate an alternative mechanism involving the correlated reduction in radiative and non-radiative recombination rates that explains the increase in light-emission efficiency of InGaN with increasing indium concentration, without invoking the suppression of carrier diffusion. Our analysis challenges the notion that carrier localization gives rise to defect tolerance in InGaN.

References in corpus (7)

• First-principles theory of nonradiative carrier capture via multiphonon emission
• Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
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• Three-dimensional modeling of minority-carrier lateral diffusion length including random alloy fluctuations in (In,Ga)N and (Al,Ga)N single quantum wells
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Cited by in corpus (1)

• Optical properties of InGaN quantum wells: accurately modeling the effects of disorder