Observation of long-range carrier diffusion in InGaN quantum wells, and implications from fundamentals to devices

Abstract

Photoluminescence measurements on high-quality InGaN quantum wells reveal that carriers diffuse laterally to long distances at room temperature, up to tens of microns. This behavior, which shows a pronounced dependence on the excitation density, contrasts with the common expectation of a short diffusion length. The data is well explained by a diffusion model taking into account the full carrier recombination dynamics, obtained from time-resolved measurements. These observations have important implications for understanding the high efficiency of III-nitride emitters, but also to properly interpret photoluminescence experiments and to design efficient small-scale devices.

References in corpus (3)

• Quantum efficiency of III-Nitride emitters: evidence for defect-assisted non-radiative recombination and its effect on the green gap
• Field-assisted Shockley-Read-Hall recombinations in III-Nitride quantum wells
• Determination of the carrier diffusion length in GaN from cathodoluminescence maps around threading dislocations: fallacies and opportunities

Cited by in corpus (4)

• Three-dimensional modeling of minority-carrier lateral diffusion length including random alloy fluctuations in (In,Ga)N and (Al,Ga)N single quantum wells
• Efficient first-principles inverse design of nanolasers
• Increased light-emission efficiency in disordered InGaN through the correlated reduction of recombination rates
• Optical properties of InGaN quantum wells: accurately modeling the effects of disorder