Optical properties of InGaN quantum wells: accurately modeling the effects of disorder

Abstract

A model including random alloy disorder is used to account for the outstanding optical properties of InGaN quantum wells. The model provides excellent agreement to experimental observations on various structures. This study clarifies the prevalent role played by disorder in optical features such as the luminescence lineshape, the Stokes shift, and the radiative rate. Finally, the relationship between disorder and the peculiar properties of long-wavelength InGaN emitters is investigated.

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