Optical properties of InGaN quantum wells: accurately modeling the effects of disorder

Abstract

A model including random alloy disorder is used to account for the outstanding optical properties of InGaN quantum wells. The model provides excellent agreement to experimental observations on various structures. This study clarifies the prevalent role played by disorder in optical features such as the luminescence lineshape, the Stokes shift, and the radiative rate. Finally, the relationship between disorder and the peculiar properties of long-wavelength InGaN emitters is investigated.

References in corpus (16)

• Unraveling the "Green Gap" problem: The role of random alloy fluctuations in InGaN/GaN light emitting diodes
• Carrier localization mechanisms in InGaN/GaN quantum wells
• Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides
• Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
• Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers
• Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
• Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: insights from theory and numerical simulations
• Electrical properties of III-Nitride LEDs: recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling
• Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem
• Predicting the Ionization Threshold for Carriers in Excited Semiconductors
• Observation of long-range carrier diffusion in InGaN quantum wells, and implications from fundamentals to devices
• Interface roughness, carrier localization and wave function overlap in $c$-plane InGaN/GaN quantum wells: Interplay of well width, alloy microstructure, structural inhomogeneities and Coulomb effects
• Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes
• Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds
• Wigner-Weyl description of light absorption in disordered semiconductor alloys using the localization landscape theory
• Increased light-emission efficiency in disordered InGaN through the correlated reduction of recombination rates