Predicting the Ionization Threshold for Carriers in Excited Semiconductors
arXiv:0709.1415 · doi:10.1016/j.ssc.2008.01.012
Abstract
A simple set of formulas is presented which allows prediction of the fraction of ionized carriers in an electron-hole-exciton gas in a photoexcited semiconductor. These results are related to recent experiments with excitons in single and double quantum wells.
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Cited by in corpus (16)
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