Field-assisted Shockley-Read-Hall recombinations in III-Nitride quantum wells

Abstract

The physical process driving low-current non-radiative recombinations in high-quality III-Nitride quantum wells is investigated. Lifetime measurements reveal that these recombinations scale with the overlap of the electron and hole wavefunctions and show weak temperature dependence, in contrast with common empirical expectations for Shockley-Read-Hall recombinations. A model of field-assisted multiphonon point defect recombination in quantum wells is introduced, and shown to quantitatively explain the data. This study provides insight on the high efficiency of III-Nitride light emitters.

References in corpus (2)

• First-principles theory of nonradiative carrier capture via multiphonon emission
• Electrical properties of III-Nitride LEDs: recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

Cited by in corpus (6)

• Quantum efficiency of III-Nitride emitters: evidence for defect-assisted non-radiative recombination and its effect on the green gap
• Efficiency Models for GaN-based Light-Emitting Diodes: Status and Challenges
• Imaging non-radiative point defects buried in quantum wells using cathodoluminescence
• Observation of long-range carrier diffusion in InGaN quantum wells, and implications from fundamentals to devices
• Probing alloy formation using different excitonic species: The particular case of InGaN
• Increased light-emission efficiency in disordered InGaN through the correlated reduction of recombination rates