92 citations
4 papers
Many-body effects in strongly-disordered III-nitride quantum wells: interplay between carrier localization and Coulomb interaction
Aurelien David, Nathan G. Young, Michael D. Craven
The joint impact of Anderson localization and many-body interaction is observed in the optical properties of strongly-disordered III-nitride quantum wells, a system where the Coulo…
Quantum efficiency of III-Nitride emitters: evidence for defect-assisted non-radiative recombination and its effect on the green gap
Aurelien David, Nathan G. Young, Christophe A. Hurni +1
Carrier lifetime measurements reveal that, contrary to common expectations, the high-current non-radiative recombination (droop) in III-Nitride light emitters is comprised of two c…
Field-assisted Shockley-Read-Hall recombinations in III-Nitride quantum wells
Aurelien David, Christophe A. Hurni, Nathan G. Young +1
The physical process driving low-current non-radiative recombinations in high-quality III-Nitride quantum wells is investigated. Lifetime measurements reveal that these recombinati…
Electrical properties of III-Nitride LEDs: recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling
Aurelien David, Christophe A. Hurni, Nathan G. Young +1
The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperat…