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20162019
most citedQuantum efficiency of III-Nitride emitters: evidence for defect-assisted non-radiative recombination and its effect on the green gap

92 citations

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cond-mat.mtrl-sci2016★ 58 cited

Electrical properties of III-Nitride LEDs: recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

Aurelien David, Christophe A. Hurni, Nathan G. Young +1

The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperat…