Quantum-Confined Stark Effect in polar and nonpolar Wurtzite InN/GaN Heterostructures: Influence on Electronic Structure and Compensation by Coulomb Attraction

Abstract

In this paper we systematically analyze the electronic structures of polar and nonpolar wurtzite-InN/GaN quantum dots and their modification due to the quantum-confined Stark effect caused by intrinsic fields. This is achieved by combining continuum elasticity theory with an empirical tight binding model to describe the elastic and single-particle electronic properties in these nitride systems. Based on these results, a many-body treatment is used to determine optical absorption spectra. The efficiency of optical transitions depends on the interplay between the Coulomb interaction and the quantum-confined Stark effect. We introduce an effective confinement potential which represents the electronic structure under the influence of the intrinsic polarization fields and calculate the needed strength of Coulomb interaction to diminish the separation of electrons and holes.

10 pages, 10 figures, submitted to Phys. Rev. B (2012)

References in corpus (3)

• Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
• Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory
• Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model

Cited by in corpus (3)

• Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
• Interface roughness, carrier localization and wave function overlap in $c$-plane InGaN/GaN quantum wells: Interplay of well width, alloy microstructure, structural inhomogeneities and Coulomb effects
• Experimental and theoretical analyses of strongly polarized photon emission from non-polar InGaN quantum dots