2 papers
cond-mat.mtrl-sci2000
Point defects on III-V semiconductor surfaces
G. Schwarz, J. Neugebauer, M. Scheffler
The basic properties of point defects (atomic geometry, the position of charge-transfer levels, and formation energies) on the (110) surface of GaAs, GaP, and InP have been calcula…
physics.comp-ph1998
Novel Reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors
T. K. Zywietz, J. Neugebauer, M. Scheffler +1
We have studied the driving forces governing reconstructions on polar GaN surfaces employing first-principles total-energy calculations. Our results reveal properties not observed…